Theoretical investigation of mid-infrared interband cascade lasers based on type II quantum wells

作者：Yao-Ming Mu, Rui Q. Yang · 发表于：Journal of Applied Physics · 年份：1998 · DOI：10.1063/1.368789 · 被引用次数：26 · 研究领域：Spectroscopy and Laser Applications、Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices

The band structures and optical gain in mid-infrared type II InAs/GaInSb/AlSb interband cascade lasers were investigated using an eight-band k⋅p model. Threshold carrier densities with different electric fields were obtained at 80 and 300 K. Implications of the calculated results on device performance are discussed.