Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

作者：Roman Vaxenburg, Efrat Lifshitz, Al. L. Efros · 发表于：Applied Physics Letters · 年份：2013 · DOI：10.1063/1.4789364 · 被引用次数：98 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、ZnO doping and properties

We calculate the rate of nonradiative Auger recombination in InGaN/GaN quantum wells with rectangular and smooth confining potentials. The calculations show that the rate of Auger recombination in rectangular quantum wells is sufficiently high to explain the efficiency droop in nitride-based light emitting diodes (LEDs). This rate, however, can be reduced by softening of the confining potential and a three-fold suppression is demonstrated in the studied quantum wells. The suppression of the Auger recombination rate improves LED radiative efficiency and reduces the droop effect, as we show using the standard recombination (ABC) model.