Fundamentals of Semiconductors: Physics and Materials Properties

作者：D C Herbert · 发表于：Semiconductor Science and Technology · 年份：1996 · DOI：10.1088/0268-1242/11/10/018 · 被引用次数：737 · 研究领域：Semiconductor Quantum Structures and Devices、Surface and Thin Film Phenomena

This book has evolved from lecture courses for postgraduate students and gives an excellent tutorial introduction to the basic physics of semiconductors. Physical models are used to explain the various phenomena and mathematical derivation is kept to a minimum. The liberal use of high quality diagrams greatly enhances the presentation and readability. As might be expected from these authors, the coverage of optical properties is particularly strong and contains valuable discussion of the various spectroscopic techniques. The coverage of band structure, lattice dynamics and defects is also good and includes a very readable account of group theoretical methods. Applications to device physics are, however, deliberately excluded. The treatment of transport and hot-carrier effects is rather sketchy. For example, impact ionization, Monte Carlo methods and Landauer formulae are not mentioned. It is also perhaps surprising that heavy doping and impurity band effects are excluded. The book, however, already extends to 617 pages and omissions are inevitable in a subject as large as this. The authors have tried to be topical wherever possible; for example, an interesting account of the quantum Hall effect is included and semiconducting aspects of the new high temperature superconducting materials are mentioned. There is also a useful section on quantum confinement effects. The interest of the book is increased by the inclusion of a number of short historical reviews by eminent authoriti...