Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

作者：C. Canali, G. Majni, R. Minder, G. Ottaviani · 发表于：IEEE Transactions on Electron Devices · 年份：1975 · DOI：10.1109/t-ed.1975.18267 · 被引用次数：664 · 研究领域：Silicon and Solar Cell Technologies、Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices

The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.