Magnesium oxide as a candidate high-κ gate dielectric

作者：Luke Yan, C. M. Lopez, R. P. Shrestha, E. A. Irene, Alexandra Suvorova, Martin Saunders · 发表于：Applied Physics Letters · 年份：2006 · DOI：10.1063/1.2191419 · 被引用次数：88 · 研究领域：Semiconductor materials and devices、Copper Interconnects and Reliability、Electronic and Structural Properties of Oxides

Magnesium oxide (MgO) thin films with sharp interfaces were deposited by sputtering of a Mg target on Si. The film stack was characterized using spectroscopic ellipsometry and transmission electron microscopy and the film static dielectric constant (κ) and interface traps were determined. An amorphous SiO2 layer was found at the MgO∕Si interface as a result of subcutaneous Si oxidation. κ for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO∕Si were found to be comparable with SiO2∕Si, rendering MgO competitive with all presently considered high-κ dielectrics.