Nanoscale Memristor Device as Synapse in Neuromorphic Systems

作者：Sung Hyun Jo, Ting‐Chang Chang, Idongesit E. Ebong, Bhavitavya B. Bhadviya, Pinaki Mazumder, Wei Lü · 发表于：Nano Letters · 年份：2010 · DOI：10.1021/nl904092h · 被引用次数：4176 · 研究领域：Advanced Memory and Neural Computing、Neuroscience and Neural Engineering、Photoreceptor and optogenetics research

A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal-oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.