Dependence of 1f Noise on Defects Induced in Copper Films by Electron Irradiation

作者：Jonathan P. Pelz, John L. Clarke · 发表于：Physical Review Letters · 年份：1985 · DOI：10.1103/physrevlett.55.738 · 被引用次数：85 · 研究领域：Surface and Thin Film Phenomena、Electron and X-Ray Spectroscopy Techniques、Advancements in Photolithography Techniques

When 500-keV electron irradiation was used to induce defects in polycrystalline copper films maintained at 90 K, the spectral density of the $\frac{1}{f}$ noise voltage across the films increased by as much as 1 order of magnitude, while the resistivity increased by at most 10%. When the films were annealed at progressively higher temperatures, both the $\frac{1}{f}$ noise and the resistivity were reduced; however, at lower annealing temperatures, the fractional reduction in the added noise was substantially more than that in the added resistivity.