Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

作者：J. C. Zhang, Desheng Jiang, Qian Sun, J. F. Wang, Y. T. Wang, J. P. Liu, J. Chen, R. Q. Jin, Jia-Ji Zhu, Hang Yang, Tao Dai, Quanjie Jia · 发表于：Applied Physics Letters · 年份：2005 · DOI：10.1063/1.2012531 · 被引用次数：62 · 研究领域：Semiconductor Quantum Structures and Devices、GaN-based semiconductor devices and materials、Quantum Dots Synthesis And Properties

The influence of dislocations on photoluminescence (PL) of InGaN∕GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The ω scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN∕GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low.