Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices

作者：E. R. Youngdale, Jerry R. Meyer, C. A. Hoffman, F. J. Bartoli, C. H. Grein, P. M. Young, Hannelore Ehrenreich, R. H. Miles, David Hou Chi Chow · 发表于：Applied Physics Letters · 年份：1994 · DOI：10.1063/1.111325 · 被引用次数：291 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Chalcogenide Semiconductor Thin Films

We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady-state photoconductive response to frequency-doubled CO2 radiation, at intensities varying by over four orders of magnitude. Theoretical Auger rates were derived, based on a k⋅p calculation of the superlattice band structure in a model which employs no adjustable parameters. At 77 K, both experiment and theory yield Auger lifetimes which are approximately two orders of magnitude longer than those in Hg1−xCdxTe with the same energy gap. This finding has highly favorable implications for the application of InAs–Ga1−xInxSb superlattices to infrared detector and nonlinear optical devices.