Electron Tunneling through Asymmetric Films of Thermally Grown Al2O3

作者：Solomon R. Pollack, C. E. K. Morris · 发表于：Journal of Applied Physics · 年份：1964 · DOI：10.1063/1.1713657 · 被引用次数：145 · 研究领域：Semiconductor materials and devices、Electronic and Structural Properties of Oxides、Vacuum and Plasma Arcs

The current through Al-Al2O3-metal structures was studied in detail and a description based upon electron tunneling is presented. It is shown that: the trapezoidal energy barrier model of Simmons adequately accounts for the details of the current-voltage characteristic over 9 current decades; there is a built-in voltage across a thermally grown oxide film of 0.92 V, in agreement with Mott's theory; the vacuum work function of the counterelectrode determines the barrier height at the oxide-counterelectrode interface; and the electron affinity of Al2O3 is 1.58 eV.