Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate

作者：Sha Shiong Ng, Tiem Leong Yoon, Zainuriah Hassan, H. Abu Hassan · 发表于：Applied Physics Letters · 年份：2009 · DOI：10.1063/1.3157130 · 被引用次数：25 · 研究领域：GaN-based semiconductor devices and materials、Thermal Radiation and Cooling Technologies、Thermal properties of materials

Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate are investigated experimentally and theoretically. Two strong absorption peaks that correspond to the surface and interface phonon polaritons are clearly observed at 710 and 916 cm−1, respectively. This observation is in good agreement with the results simulated using an anisotropy model. Finally, the obtained surface phonon polariton (SPP) mode is compared with the reported result. It is revealed that the SPP mode in the wurtzite GaN thin film is shifted toward higher frequency as compared to that in the wurtzite bulk GaN.