Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors

作者：Sungjae Cho, Nicholas P. Butch, Johnpierre Paglione, Michael S. Fuhrer · 发表于：Nano Letters · 年份：2011 · DOI：10.1021/nl200017f · 被引用次数：175 · 研究领域：Topological Materials and Phenomena、Graphene research and applications、2D Materials and Applications

Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.