The simulation of growth thermodynamics in the synthesis of GaN 1-x P x alloys

作者：K. X. Zhang, Desheng Huang, Hangang Xie, Yong Xu, Jiangfeng Gong, Wei Zhu · 发表于：Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 年份：2010 · DOI：10.1117/12.869697 · 研究领域：GaN-based semiconductor devices and materials、nanoparticles nucleation surface interactions

In this paper, thermodynamics method was used to calculate the growth of GaN 1-x P x ternary alloys on (0001) GaN/sapphire substrates and the solubility of phosphorus in GaN by using the Gibbs free energy theory was calculated. The calculated results show that great deviation from linearity between the input mole ratio R and the equilibrium partial pressures, and the content of P in GaN varies with the growth temperature and the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200K as the strain factor increases from 0 to 1, indicating that the strain in the GaN 1-x P x layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growth temperature.