Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope

作者：Markus F. Pfister, Matthew B. Johnson, Santos Francisco Alvarado, Huub W. M. Salemink, U. Marti, Denis Martin, François Morier-Genoud, F. K. Reinhart · 发表于：Applied Physics Letters · 年份：1995 · DOI：10.1063/1.114494 · 被引用次数：60 · 研究领域：Surface and Thin Film Phenomena、Semiconductor Quantum Structures and Devices、Quantum and electron transport phenomena

The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)4(GaAs)8 superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed.