Organic Heterostructure Field-Effect Transistors

作者：Ananth Dodabalapur, Howard Edan Katz, Luisa Torsi, Robert C. Haddon · 发表于：Science · 年份：1995 · DOI：10.1126/science.269.5230.1560 · 被引用次数：466 · 研究领域：Organic Electronics and Photovoltaics、Diamond and Carbon-based Materials Research、Advanced Memory and Neural Computing

Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are alpha-hexathienylene (alpha-6T) and C(60). The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of alpha-6T and C(60). The observed effects are not unique to the two materials chosen and can be quite universal provided certain conditions are met. The device can be used as a building block to form low-cost, low-power complementary integrated circuits.