Application of HfSiON as a gate dielectric material

作者：Mark R. Visokay, James J. Chambers, Antonio L. P. Rotondaro, Ajit Shanware, Luigi Colombo · 发表于：Applied Physics Letters · 年份：2002 · DOI：10.1063/1.1476397 · 被引用次数：378 · 研究领域：Semiconductor materials and devices、Integrated Circuits and Semiconductor Failure Analysis、Advanced Memory and Neural Computing

Physical and electrical properties of HfSiON that make this material desirable as the gate dielectric in a standard metal–oxide–semiconductor flow are reported. Sputtering was used to deposit films with minimal low dielectric constant interface layers, equivalent oxide thicknesses below 13 Å, and leakage current density at least two orders of magnitude lower than SiO2. The presence of nitrogen in the film enhances the thermal stability relative to HfSiO, and no crystallization was observed for anneals up to 1100 °C.