High-field transport in wide-band-gap semiconductors

作者：David K. Ferry · 发表于：Physical review. B, Solid state · 年份：1975 · DOI：10.1103/physrevb.12.2361 · 被引用次数：264 · 研究领域：Quantum and electron transport phenomena、Advancements in Semiconductor Devices and Circuit Design、Semiconductor Quantum Structures and Devices

The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above ${10}^{7}$ cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{}${10}^{7}$ cm/sec.