Ultraviolet Emission from a Diamond pn Junction

作者：Satoshi Koizumi, Kenji Watanabe, Masataka Hasegawa, H. Kanda · 发表于：Science · 年份：2001 · DOI：10.1126/science.1060258 · 被引用次数：610 · 研究领域：Diamond and Carbon-based Materials Research、Ion-surface interactions and analysis、Semiconductor materials and devices

We report the realization of an ultraviolet light-emitting diode with the use of a diamond pn junction. The pn junction was formed from a boron-doped p-type diamond layer and phosphorus-doped n-type diamond layer grown epitaxially on the 111 surface of single crystalline diamond. The pn junction exhibited good diode characteristics, and at forward bias of about 20 volts strong ultraviolet light emission at 235 nanometers was observed and was attributed to free exciton recombination.