Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode

作者：E. Dupont, Hui C. Liu, Margaret Buchanan, Z. R. Wasilewski, Daniel St-Germain, Paul C. Chevrette · 发表于：Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 年份：1999 · DOI：10.1117/12.344553 · 被引用次数：9 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices

This paper presents the recent developments of large area focal plane 'pseudo' arrays for infrared (IR) imaging. The devices (called QWIP-LED) are based on the epitaxial integration of an n-type mid-IR (8 - 10 micrometer in the present study) GaAs/AlGaAs quantum well detector with light emitting diode. The originality of this work is to use n-type quantum wells for large detection responsivity. From these structures, very large area (approximately equals cm2) mesas are processed with V-grooves to couple the mid-IR light with the QW intersubband transitions. The increase of spontaneous emission by the mid-infrared induced photocurrent is detected with a CCD camera in the reflection configuration. As demonstrated earlier on p-type QWIP structures the mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion.