Metal gate work function engineering using AlNx interfacial layers

作者：Husam N. Alshareef, H.F. Luan, Kiho Choi, H. R. Harris, H.C. Wen, Manuel Quevedo-López, P. Majhi, B. H. Lee · 发表于：Applied Physics Letters · 年份：2006 · DOI：10.1063/1.2186517 · 被引用次数：52 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Integrated Circuits and Semiconductor Failure Analysis

Metal gate work function enhancement using thin AlNx interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlNx interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlNx interfacial layer increased when the concentration of SiO2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO2 and maximum for SiO2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.