Field-enhanced trapping in deep levels by multiple phonon emission in semi-insulating GaAs

作者：R. M. Rubinger, A. G. de Oliveira, G. M. Ribeiro, J. C. Bezerra, M. V. B. Moreira, Hélio Chacham · 发表于：Journal of Applied Physics · 年份：2000 · DOI：10.1063/1.1314899 · 被引用次数：15 · 研究领域：Semiconductor Quantum Structures and Devices、Spectroscopy and Quantum Chemical Studies、Quantum and electron transport phenomena

We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 °C under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field.