Band parameters for III–V compound semiconductors and their alloys

作者：I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan · 发表于：Journal of Applied Physics · 年份：2001 · DOI：10.1063/1.1368156 · 被引用次数：7322 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor materials and devices、Chalcogenide Semiconductor Thin Films

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.