Metal–Oxide RRAM

作者：H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, Frederick T. Chen, Ming‐Jinn Tsai · 发表于：Proceedings of the IEEE · 年份：2012 · DOI：10.1109/jproc.2012.2190369 · 被引用次数：2728 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Transition Metal Oxide Nanomaterials

In this paper, recent progress of binary metal–oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal–oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.