1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon

作者：Helmut Ennen, J. Schneider, Gernot S. Pomrenke, A. Axmann · 发表于：Applied Physics Letters · 年份：1983 · DOI：10.1063/1.94190 · 被引用次数：566 · 研究领域：Semiconductor Quantum Structures and Devices、Silicon Nanostructures and Photoluminescence、Quantum Dots Synthesis And Properties

Well-resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium-implanted GaP, GaAs, InP, and Si. The optical transitions occur between the weakly crystal field split spin-orbit levels, 4I13/2→4I15/2, of Er3+(4f11). Typical spectral linewidths in GaAs are 2 cm−1(0.25 meV) at 6 K and 11 cm−1(1.36 meV) at room temperature.