Investigation of nitrogen solubility process in silicon carbide

作者：S. K. Lilov, Yu. N. Tairov, Valeri F. Tsvetkov · 发表于：Kristall und Technik · 年份：1979 · DOI：10.1002/crat.19790140115 · 被引用次数：8 · 研究领域：Silicon Carbide Semiconductor Technologies、Advanced ceramic materials synthesis、Aluminum Alloys Composites Properties

Abstract On the basis of the epitaxial layers of SiC (N) grown from vapour phase by the sublimation method in a temperature interval (1900–2200) °C and at nitrogen partial pressures from 4 to 760 Torr has been determined the dependence of the nitrogen content in the epitaxial layers of SiC(N) on the nitrogen partial pressure and the temperature of growing. A thermodynamics analysis of the nitrogen solubility process in silicon carbide has been developed taking account of the electron‐hole interaction. The experimental and calculation results, we have obtained, allowed us to determine the partial mol solubility heat of nitrogen in SiC.