Study of the Filamentary Growth of Silicon Crystals from the Vapor

作者：Ricarda Wagner, W. C. Ellis, Kenneth A. Jackson, S. M. Arnold · 发表于：Journal of Applied Physics · 年份：1964 · DOI：10.1063/1.1713143 · 被引用次数：232 · 研究领域：Silicon and Solar Cell Technologies、Solidification and crystal growth phenomena、Force Microscopy Techniques and Applications

The preparation from vapor and the structure of filamentary crystals of silicon have been studied in detail. It was found by chemical etching, by examination for a twist associated with a screw dislocation, and by observations in the electron microscope, that both ribbons and needles of small dimensions are free of dislocations and imperfections. Certain impurities such as gold, nickel, or platinum, however, are essential for the growth of filamentary crystals. The growth of micron size and larger whisker crystals from the vapor takes place in two stages. The first is a rapid extension in length of a leader-like crystal of small cross section; the second, a slow thickening of the leader through deposition on lateral faces. Initial growth is associated with impurities and does not require an axial screw dislocation. Subsequent growth may be explained by classical nucleation at a step and lateral translation of the step.