Influence of Nitrogen Doping on the Defect Formation and Surface Properties of TiO2 Rutile and Anatase

作者：Matthias Batzill, Erie H. Morales, Ulrike Diebold · 发表于：Physical Review Letters · 年份：2006 · DOI：10.1103/physrevlett.96.026103 · 被引用次数：667 · 研究领域：TiO2 Photocatalysis and Solar Cells、Advanced Photocatalysis Techniques、Electronic and Structural Properties of Oxides

Nitrogen doping-induced changes in the electronic properties, defect formation, and surface structure of TiO2 rutile(110) and anatase(101) single crystals were investigated. No band gap narrowing is observed, but N doping induces localized N 2p states within the band gap just above the valence band. N is present in a N(III) valence state, which facilitates the formation of oxygen vacancies and Ti 3d band gap states at elevated temperatures. The increased O vacancy formation triggers the 1 x 2 reconstruction of the rutile (110) surface. This thermal instability may degrade the catalyst during applications.