Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field

作者：L. E. Vorob’ev, Evgeny A. Zibik, Dmitry A. Firsov, Vadim A. Shalygin, O. N. Nashchekina, I. I. Saǐdashev · 发表于：Semiconductors · 年份：1998 · DOI：10.1134/1.1187499 · 被引用次数：3 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices、Photonic Crystals and Applications

Results of experimental investigations of the transformation of intraband light absorption spectra by the quantum-well electrons in a transverse electric field are presented. In addition to the familiar Stark effect, absorption oscillations in the photoionization band are detected. These oscillations are caused by electron transitions from the ground state in a quantum well to quasidiscrete levels arising in the continuum of states above the well due to the linear potential of the external electric field.