Schottky Barriers in Carbon Nanotube Heterojunctions

作者：A. A. Odintsov · 发表于：Physical Review Letters · 年份：2000 · DOI：10.1103/physrevlett.85.150 · 被引用次数：158 · 研究领域：Carbon Nanotubes in Composites、Graphene research and applications、Force Microscopy Techniques and Applications

Electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes are investigated. Ineffective screening of the long-range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range sensitively depending on the doping strength. The Schottky barrier gives rise to an asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao et al. and Fuhrer et al. Dynamic charge buildup near the junction results in a steplike growth of the current at reverse bias.