InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

作者：Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho · 发表于：Applied Physics Letters · 年份：1998 · DOI：10.1063/1.120688 · 被引用次数：733 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Ga2O3 and related materials

InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. After 4 μm etching of the ELOG substrate, the etch pit density was about 2×108 cm2 in the region of the 4-μm-wide stripe window, but almost zero in the region of the 7-μm-wide SiO2 stripe.