Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

作者：H. Y. Liu, Bo Xu, J. J. Qian, X. L. Ye, Qiqiang Han, Dashuang Ding, Jixin Liang, X.R. Zhong, Z. G. Wang · 发表于：Journal of Applied Physics · 年份：2001 · DOI：10.1063/1.1388021 · 被引用次数：11 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices、Advanced Semiconductor Detectors and Materials

The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported.