Measurement and modelling of high-linearity partially depleted absorber photodiode

作者：Andréas Beling, Houhe Pan, H. Chen, Joe C. Campbell · 发表于：Electronics Letters · 年份：2008 · DOI：10.1049/el:20089792 · 被引用次数：18 · 研究领域：Advanced Photonic Communication Systems、Radio Frequency Integrated Circuit Design、Semiconductor Quantum Structures and Devices

Third-order intermodulation distortions of an InGaAs/InP partially depleted absorber photodiode (PDA-PD) using high doping levels for both p-type and n-type absorbers are characterised using a two-tone measurement technique. The third-order local intercept point (IP3) of the device increases only slightly with frequency, and remains as high as 39 dBm up to 20 GHz. The frequency characteristics of the IP3 can be well explained by an equivalent circuit model.