Symmetry analysis of second-harmonic generation in silicon

作者：Tom Driscoll, Daniel Guidotti · 发表于：Physical review. B, Condensed matter · 年份：1983 · DOI：10.1103/physrevb.28.1171 · 被引用次数：63 · 研究领域：Silicon Nanostructures and Photoluminescence、Force Microscopy Techniques and Applications、Ion-surface interactions and analysis

We present observations of second-harmonic generation in Si and argue that under intense laser excitation inversion symmetry is broken, and dipolar bulk second-harmonic generation becomes possible. A mechanism is proposed for removing inversion symmetry in higly excited Si.