A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in a scanning transmission electron microscope

作者：P. M. Petroff, David V. Lang · 发表于：Applied Physics Letters · 年份：1977 · DOI：10.1063/1.89590 · 被引用次数：104 · 研究领域：Electron and X-Ray Spectroscopy Techniques、Advanced Electron Microscopy Techniques and Applications、Silicon and Solar Cell Technologies

A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in semiconductor materials is presented. The technique combines the versatility and sensitivity of deep-level transient spectroscopy (DLTS) with the capability for defect analysis at high resolution of the scanning transmission electron microscope. This scanning DLTS method (SDLTS) is illustrated by observing Cu-related defect centers in Ga1−xAlxAs epitaxial layers. A high sensitivity (3×1015 Cu defects cm−3 have been detected) and a spatial resolution of 2 μ or better illustrate the potential of the technique for the study of the electrical behavior of defects in semiconductor devices.