Low-resistivity p -side contacts for InP-baseddevices usingburied InGaAs tunnel junction

作者：Markus Arzberger, M. Lohner, G. G. A. Böhm, M.-C. Amann · 发表于：Electronics Letters · 年份：2000 · DOI：10.1049/el:20000039 · 被引用次数：12 · 研究领域：Semiconductor Lasers and Optical Devices、Molecular Junctions and Nanostructures、Semiconductor Quantum Structures and Devices

A lattice-matched p+/n+-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ (~1020 cm-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3 × 10-6 Ωcm2.