InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

作者：Huang Jie, Guo Tian-Yi, Haiying Zhang, Xu Jingbo, Fu Xiaojun, Hao Yang, Niu Jie-Bin · 发表于：Chinese Physics Letters · 年份：2010 · DOI：10.1088/0256-307x/27/11/118502 · 被引用次数：6 · 研究领域：Radio Frequency Integrated Circuit Design、Semiconductor Quantum Structures and Devices、Semiconductor materials and devices

A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph (EBL) technology is successfully developed and used to fabricate the 150 nm gate-length In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T-gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics: the transconductance G m , maximum saturation drain-to-source current I DSS , threshold voltage V T , maximum current gain frequency f T derived from h 21 , maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power-gain of metamorphic InGaAs/InAlAs high electron mobility transistors (HEMTs) are 470 mS/mm, 560 mA/mm, −1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications.