A Theoretical Analysis of the Effect of Inert Blocking Agent on the Galvanostatic Pulse Plating

作者：K.‐M. Yin · 发表于：Journal of The Electrochemical Society · 年份：1998 · DOI：10.1149/1.1838884 · 被引用次数：15 · 研究领域：Electrodeposition and Electroless Coatings、Semiconductor materials and interfaces、Electronic Packaging and Soldering Technologies

A theoretical study on the effect of inert blocking inhibitors on the pulse electrodeposition of metal is presented. The model can be used to evaluate the influence of inhibitors with various adsorption and inclusion characteristics under the current‐pulse operating condition. It is shown in the simulation that under normal plating condition of small additive concentration, the additive surface coverage is larger in the pulse operating mode than in direct current mode. The characteristics of potential response during pulse on‐time depends on the adsorption capability of the additive and the pulse current that is applied. For a small applied pulse current, the additive‐adsorption‐induced activation overpotential may overwhelm the concentration overpotential, and a negative potential derivative with respect to time may occur during on‐time For a large applied current or with an additive of minor adsorption capability, the normal positive potential derivative with respect to time is expected during on‐time because the concentration overpotential is more influential.