High detectivity InAs quantum dot infrared photodetectors

作者：Eui‐Tae Kim, Anupam Madhukar, Zhengmao Ye, Joe Charles Campbell · 发表于：Applied Physics Letters · 年份：2004 · DOI：10.1063/1.1719259 · 被引用次数：210 · 研究领域：Semiconductor Quantum Structures and Devices、Advanced Semiconductor Detectors and Materials、Semiconductor Lasers and Optical Devices

We report a high detectivity of 3×1011 cm Hz1/2/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active regions. The high detectivity seen at 1.4 V corresponds to photoresponse peaks at 9.3 and 8.7 μm for positive and negative bias, respectively.