Prediction of Fermi Energies and Photoelectric Thresholds Based on Electronegativity Concepts

作者：Arthur H. Nethercot · 发表于：Physical Review Letters · 年份：1974 · DOI：10.1103/physrevlett.33.1088 · 被引用次数：479 · 研究领域：Semiconductor materials and interfaces、Chalcogenide Semiconductor Thin Films、Transition Metal Oxide Nanomaterials

A simple formula involving the geometric mean of the electronegativities of the two components is proposed for the determination of the Fermi energies and hence the photoelectric thresholds of simple binary compounds, and is found to be surprisingly accurate for all presently available data. A theoretical basis for the use of the "postulate of the geometric mean" is also given.