Raman Selection Rules for the Observation of Interface Modes in InAs/GaSb Superlattices

作者：Sergey G. Lyapin, Philip C. Klipstein, Nigel John Mason, Pete Walker · 发表于：Physical Review Letters · 年份：1995 · DOI：10.1103/physrevlett.74.3285 · 被引用次数：37 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Electronic and Structural Properties of Oxides

We present a Raman study of elastic interface modes in InAs $/$GaSb superlattices from the viewpoint of their polarization selection rules. We show that one of the modes, which is strongly localized to the interfaces, can be used to probe sequentially grown interfaces in an independent and selective way. This opens up a promising new application area for Raman characterization of $AB/CD$ superlattices.