Silicon field-effect transistor based on quantum tunneling

作者：John R. Tucker, Chinlee Wang, Paul Scott Carney · 发表于：Applied Physics Letters · 年份：1994 · DOI：10.1063/1.112250 · 被引用次数：152 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Nanowire Synthesis and Applications

This letter explores regulation of current flow within a silicon field-effect transistor by gate-induced tunneling through a Schottky barrier located at the interface between a metallic source electrode and the Si channel. The goal here is to forestall short-channel effects which are expected to prevent further size reductions in conventional devices when linewidths reach ∼1000 Å. Control of tunneling appears to be possible at minimum channel lengths L∼250 Å or less while simultaneously eliminating the need for large-area source and drain contacts, so that scaling of Si transistors could be significantly extended if this principle proves technically feasible.