Broadening of the Si doping layer in planar-doped GaAs in the limit of high concentrations

作者：Rosana Rodrigues, P. S. S. Guimãraes, J. F. Sampaio, R. A. Nogueira, Andreia T. Oliveira, I. F. L. Dias, J. C. Bezerra, A. G. de Oliveira, Alberto Chaves, L. M. R. Scolfaro · 发表于：Solid State Communications · 年份：1991 · DOI：10.1016/0038-1098(91)90622-3 · 被引用次数：10 · 研究领域：Semiconductor Quantum Structures and Devices、Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices