Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond

作者：J. C. Hensel, Hiroshi Hasegawa, Minoru Nakayama · 发表于：Physical Review · 年份：1965 · DOI：10.1103/physrev.138.a225 · 被引用次数：338 · 研究领域：Force Microscopy Techniques and Applications、Quantum and electron transport phenomena、Diamond and Carbon-based Materials Research

An energy band of a diamond lattice at $X(\mathrm{k}=(\frac{2\ensuremath{\pi}}{a})(1, 0, 0))$ on the zone boundary is two-fold degenerate because of the presence of glide-reflection symmetries. The degeneracy of the conduction band ${\ensuremath{\Delta}}_{1}$ and ${\ensuremath{\Delta}}_{{2}^{\ensuremath{'}}}$ at $X$ in silicon was lifted by applying a compressive uniaxial stress along the [011] direction, the effect of which has been observed by measuring a shift of the cyclotron resonance line for the [100] electrons. An expression for the line shift has been obtained in terms of a perturbation series. By evaluating the series using the orthogonal-plane-wave (OPW) results of Kleinman and Phillips, the ${\ensuremath{\Delta}}_{1}\ensuremath{-}{\ensuremath{\Delta}}_{{2}^{\ensuremath{'}}}$ band mixing ratio $\frac{{\ensuremath{\Xi}}_{{u}^{\ensuremath{'}}}}{\ensuremath{\Delta}E}$ is determined to be $\frac{{\ensuremath{\Xi}}_{{u}^{\ensuremath{'}}}}{\ensuremath{\Delta}E}=11.4\ifmmode\pm\else\textpm\fi{}1.1$. This result when combined with OPW estimate for $\ensuremath{\Delta}E$, the energy separation between ${\ensuremath{\Delta}}_{1}$ and ${\ensuremath{\Delta}}_{{2}^{\ensuremath{'}}}$ at the conduction band edge, yields the value ${\ensuremath{\Xi}}_{{u}^{\ensuremath{'}}}\ensuremath{\approx}5.7$ eV for the deformation potential responsible for the band splitting at $X$. The lifting of the special degeneracy of the ${X}_{1}$ states is interpreted from the viewpoint of the tetrahed...