Room-Temperature Polariton Lasing in Semiconductor Microcavities

作者：Stavros Christopoulos, G. Baldassarri Höger von Högersthal, Alastair J. D. Grundy, Pavlos G. Lagoudakis, Alexey Vitalievich Kavokin, Jeremy J. Baumberg, G. Christmann, R. Butté, Eric Feltin, J.‐F. Carlin, N. Grandjean · 发表于：Physical Review Letters · 年份：2007 · DOI：10.1103/physrevlett.98.126405 · 被引用次数：1028 · 研究领域：Strong Light-Matter Interactions、Thermal Radiation and Cooling Technologies、Plasmonic and Surface Plasmon Research

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of $29\text{ }\text{ }\ensuremath{\mu}\mathrm{J}\text{ }{\mathrm{cm}}^{\ensuremath{-}2}$, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of $\ifmmode\pm\else\textpm\fi{}5\ifmmode^\circ\else\textdegree\fi{}$ and spatial size around $5\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$.