Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

作者：Han‐Youl Ryu, Il-Gyun Choi, Hyo-Sik Choi, Jong‐In Shim · 发表于：Applied Physics Express · 年份：2013 · DOI：10.7567/apex.6.062101 · 被引用次数：205 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、ZnO doping and properties

Light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip and vertical LED structures, LEE is obtained to be <10% due to strong DUV light absorption in the p-GaN layer. In flip-chip LEDs, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of DUV LEDs with decreasing wavelength. It is also found that vertical LED structures can have advantages over flip-chip structures for increasing LEE in the TM mode.