Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

作者：Woo‐Seok Cheong · 发表于：ETRI Journal · 年份：2012 · DOI：10.4218/etrij.12.0212.0232 · 被引用次数：10 · 研究领域：Thin-Film Transistor Technologies、ZnO doping and properties、Transition Metal Oxide Nanomaterials

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.