Large-Scale Synthesis and Raman and Photoluminescence Properties of Single Crystalline β-SiC Nanowires Periodically Wrapped by Amorphous SiO 2 Nanospheres 2

作者：Zhenjiang Li, Weidong Gao, Alan Meng, Zaidan Geng, Li Gao · 发表于：The Journal of Physical Chemistry C · 年份：2008 · DOI：10.1021/jp806346d · 被引用次数：74 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Nanowire Synthesis and Applications

Novel SiC/SiO 2 chainlike nanostructures have been synthesized via a simple template/catalyst-free chemical vapor reaction approach using Si−SiO 2 mixture powder and CH 4 as raw materials at relatively low temperatures of 1250−1200 °C. Digital camera, stereoscope, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, X-ray diffraction, and infrared spectroscopy demonstrate that large-scale blue products have been obtained on graphite substrate; the samples are composed of chainlike nanostructures having lengths up to several tens of micrometers, diameters of 20−30 nm single crystalline β-SiC nanowires, and 80−100 nm amorphous SiO 2 periodic wrapping spheres, possessing [111] preferred growth direction with a high density stacking faults and twin defects. We suppose the formation of the nanostructure is induced by two-stage VS growth mechanism, especially because the defects within SiC nanowires are the critical factors for the second-stage formation of SiO 2 spheres. Some unique optical properties are observed in the room-temperature Raman spectroscopy and photoluminescence measurements of the products, which may be ascribed to crystal defects and size confinement effects.