Highly efficient band-edge emission from InP quantum dots

作者：O. I. Mićić, Julian Sprague, Z.H. Lu, Arthur J. Nozik · 发表于：Applied Physics Letters · 年份：1996 · DOI：10.1063/1.115807 · 被引用次数：315 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices

High quality InP quantum dots with diameters ranging from 25 to 45 Å, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.