Highly Conductive and Transparent Silicon Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

作者：Tadatsugu Minami, Hirotoshi Sato, Hidehito Nanto, Shinzo Takata · 发表于：Japanese Journal of Applied Physics · 年份：1986 · DOI：10.1143/jjap.25.l776 · 被引用次数：134 · 研究领域：ZnO doping and properties、Copper-based nanomaterials and applications、Gas Sensing Nanomaterials and Sensors

Highly conductive and transparent films of Si-doped ZnO have been prepared by rf magnetron sputtering of a ZnO target with SiO2 or SiO dopant added. Films with resistivity as low as 3.8×10-4 Ω cm and average transmittance above 85% in the visible region can be produced on low temperture substrates at below 250°C. Great improvement in the stability of the resistivity for use at high temperatures was obtained for Si-doped ZnO films in comparison with undoped films.