Intrinsic Tolerance to Total Ionizing Dose Radiation in Gate-All-Around MOSFETs

作者：Everett Comfort, Martin Rodgers, W. E. D. Allen, S. C. Gausepohl, En Xia Zhang, Michael L. Alles, H.L. Hughes, P. J. McMarr, Ji Ung Lee · 发表于：IEEE Transactions on Nuclear Science · 年份：2013 · DOI：10.1109/tns.2013.2280247 · 被引用次数：30 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Radiation Effects in Electronics

We measured the total ionizing dose response of gate-all-around silicon nanowire n- and pMOSFETs to x-ray doses up to 2Mrad(SiO2). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slope, even at the highest dose for a wide range of bias conditions. We attribute this to the intrinsically rad-hard feature of the gate-all-around device design, where the channel is no longer in contact with any insulating layers that could form a parasitic channel.